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 Freescale Semiconductor, Inc.
Technical Data
MBC13720/D Rev. 2, 12/2003 SiGe:C Low Noise Amplifier with Bypass Switch
MBC13720
Package Information Plastic Package Case 419B (SOT-363)
Freescale Semiconductor, Inc...
Ordering Information
Device MBC13720T1 Device Marking 20 Package SOT-363
The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is external to allow maximum design flexibility. The LNA has two selectable current settings as well as standby mode. The LNA will operate from a 2.5 to 3.0 V supply. The MBC13720 is fabricated using Motorola's Advanced RF BiCMOS process with the SiGe:C option and housed in an ultra small SOT-363 surface mount package. * * * Selectable Current, 5.0 mA or 11 mA Standby Mode to Turn Off Device Completely High Input IP3: 10 dBm @ 1.9 GHz 13 dBm @ 2.4 GHz Low Noise Figure: 1.38 dB @ 1.9 GHz 1.55 dB @ 2.4 GHz Gain @ 9.0 mA, 2.75 V: 14.5 dB @ 1.9 GHz 12 dB @ 2.4 GHz Suitable for use from 400 MHz to 2.4 GHz Bias Stabilized for Device and Temperature Variations Ultra Small SOT-363 Surface Mount Package Available Only in Tape and Reel Packaging
*
*
* * * *
Definitive Data - Motorola reserves the right to change the Production detail specifications as may be required to permit improvements in the design of its product. (c) Motorola, Inc., 2003. All rights reserved.
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Specifications
Freescale Semiconductor, Inc.
EN1 EN2 VCC
Bias Control RF In RF Out
Figure 1. Simplified Block Diagram
1 Specifications
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Table 1. Maximum Ratings
Ratings Supply Voltage Storage Temperature Range Operating Ambient Temperature Range Symbol VCC Tstg TA Value 3.3 -65 to 150 -30 to 85 Unit V C C
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 550 V and Machine Model (MM) 50 V. Additional EST data available upon request.
Table 2. Recommended Operating Conditions
Characteristic Operating Voltage Frequency Range Symbol VCC fRF Min 2.5 400 Typ 2.7 Max 3.0 2400 Unit V MHz
Table 3. Electrical Characteristics (VCC = 2.75, TA = 25C)
Characteristic Current Consumption Low IP3 High IP3 Bypass Input/Output Return Loss Low IP3 High IP3 Bypass RF Gain (900 MHz) Low IP3 High IP3 Bypass Symbol ICC RL G 20 21 -2.9 10 10 12 dB 5.0 11 0 mA mA A dB Min Typ Max Unit
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Table 3. Electrical Characteristics (Continued) (VCC = 2.75, TA = 25C)
Characteristic RF Gain (1.9 GHz) Low IP3 High IP3 Bypass RF Gain (2.4 GHz) Low IP3 High IP3 Bypass Noise Figure 900 MHz 1.9 GHz 2.4 GHz Input IP3 (900 MHz) Low IP3 High IP3 Bypass Input IP3 (1.9 GHz) Low IP3 High IP3 Bypass Input IP3 (2.4 GHz) Low IP3 High IP3 Bypass Output 1dB Compression (900 MHz) Low IP3 High IP3 Bypass Output 1db Compression (1.9 GHz) Low IP3 High IP3 Bypass Output 1dB Compression (2.4 GHz) Low IP3 High IP3 Bypass Reverse Isolation Low IP3 High IP3 Symbol G G NF IIP3 IIP3 IIP3 P1dB P1dB P1dB |S12| 25 20 14 14 5.0 11 11.5 5.0 12 11.5 5.0 6.0 13 25 4.0 10 29 -3.5 10 27 1.2 1.38 1.55 11.5 12 -2.8 13 14.5 -2.5 Min Typ
Specifications
Max
Unit dB
dB dB dBm dBm dBm dBm dBm dBm dB -
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3
Specifications
Freescale Semiconductor, Inc.
Table 4. Truth Table
EN1 0 0 1 1
NOTE:
EN2 0 1 0 1
State Standby Bypass High IP3 Low IP3
Current Consumption < 20 A 0 A 11 mA (approx.) 5.0 mA (approx.)
Logic state of 1 equals VCC voltage. Logic state of 0 equals ground potential.
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4
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Parameters
2 Parameters
Table 5. High IP3 Mode Scattering Parameters (VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz) 100 200 300 400 500 S11 |S11| 0.661 0.629 0.583 0.544 0.526 0.502 0.486 0.473 0.464 0.457 0.450 0.446 0.445 0.443 0.440 0.437 0.439 0.439 0.437 0.440 0.439 0.443 0.444 0.448 0.452 0.456 0.460 0.472 -8 -14 -20 -21 -23 -25 -26 -27 -28 -29 -30 -31 -32 -33 -35 -35 -37 -38 -40 -41 -42 -44 -45 -48 -50 -52 -57 -65 |S11| 21.189 18.913 16.730 14.168 12.141 10.757 9.523 8.531 7.725 7.028 6.461 5.990 5.551 5.226 4.903 4.611 4.370 4.160 3.981 3.822 3.675 3.530 3.416 3.322 3.236 3.151 3.032 2.943 S21 161 146 134 123 116 111 106 101 98 94 92 89 86 84 82 80 78 76 74 73 71 69 68 66 64 63 59 55 |S11| 0.010 0.014 0.019 0.024 0.029 0.034 0.039 0.044 0.050 0.056 0.061 0.067 0.073 0.079 0.085 0.091 0.097 0.103 0.111 0.117 0.124 0.132 0.140 0.149 0.159 0.169 0.193 0.223 S12 36 54 61 67 71 73 75 76 77 78 79 79 80 80 80 80 80 81 81 81 81 81 82 82 81 82 81 80 |S11| 0.829 0.801 0.764 0.726 0.709 0.690 0.676 0.665 0.656 0.650 0.643 0.639 0.634 0.632 0.628 0.626 0.623 0.622 0.618 0.617 0.613 0.612 0.611 0.608 0.605 0.600 0.589 0.573 S22 -6 -10 -14 -15 -16 -17 -18 -19 -20 -21 -22 -23 -24 -25 -26 -27 -28 -29 -31 -32 -34 -35 -37 -38 -41 -43 -48 -54
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600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2800 3000
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Parameters
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Table 6. Bypass Mode Scattering Parameters (VCC = 2.7 V, EN1 = Low, EN2 = High)
f (MHz) 100 200 300 400 500 600 S11 |S11| 0.958 0.921 0.881 0.832 0.786 0.737 0.693 0.654 0.618 0.587 0.561 0.533 0.514 0.493 0.478 0.461 0.449 0.435 0.427 0.421 0.412 0.407 0.401 0.396 0.396 0.396 0.393 0.397 -11 -21 -30 -38 -45 -52 -57 -63 -67 -72 -76 -80 -83 -87 -90 -93 -96 -99 -102 -104 -107 -110 -114 -117 -121 -124 -132 -142 |S11| 0.115 0.222 0.318 0.399 0.457 0.515 0.552 0.585 0.610 0.626 0.642 0.655 0.660 0.673 0.672 0.674 0.675 0.673 0.671 0.668 0.663 0.655 0.647 0.634 0.622 0.608 0.569 0.527 S21 79 70 61 53 45 39 33 28 23 19 16 12 9.0 6.0 2.0 -1.0 -4.0 -7.0 -9.0 -11 -14 -16 -19 -21 -23 -25 -29 -32 |S11| 0.116 0.224 0.319 0.396 0.462 0.513 0.553 0.584 0.609 0.627 0.643 0.654 0.663 0.669 0.673 0.676 0.677 0.675 0.673 0.670 0.664 0.658 0.648 0.638 0.623 0.609 0.571 0.528 S12 80 70 61 53 46 39 33 28 23 19 15 12 8 5 2 -1 -4 -6 -9 -11 -14 -16 -19 -21 -23 -26 -29 -32 |S11| 0.950 0.925 0.889 0.849 0.806 0.764 0.724 0.689 0.655 0.626 0.598 0.573 0.549 0.527 0.506 0.486 0.468 0.448 0.431 0.413 0.397 0.380 0.364 0.347 0.335 0.319 0.294 0.276 S22 -8 -16 -23 -29 -35 -41 -45 -49 -53 -57 -61 -64 -67 -71 -74 -78 -82 -85 -89 -93 -98 -103 -109 -115 -122 -130 -147 -167
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700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2800 3000
6
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Parameters
Table 7. Standby Mode Scattering Parameters (VCC = 2.7 V, EN1 = Low, EN2 = Low)
f (MHz) 100 200 300 400 500 600 S11 |S11| 0.963 0.953 0.949 0.945 0.943 0.937 0.932 0.926 0.920 0.914 0.911 0.903 0.897 0.892 0.885 0.877 0.874 0.861 0.855 0.850 0.841 0.831 0.821 0.808 0.797 0.784 0.751 0.720 -4 -7 -10 -13 -16 -19 -21 -24 -27 -30 -33 -36 -38 -41 -44 -47 -50 -52 -55 -58 -61 -64 -67 -70 -73 -76 -82 -89 |S11| 0.010 0.014 0.022 0.029 0.036 0.043 0.050 0.054 0.062 0.069 0.075 0.082 0.086 0.094 0.097 0.101 0.104 0.109 0.115 0.120 0.120 0.127 0.132 0.138 0.146 0.155 0.183 0.222 S21 35 61 71 76 75 70 76 74 75 72 72 71 72 69 69 68 68 69 69 69 70 71 72 74 75 79 80 82 |S11| 0.010 0.016 0.022 0.029 0.036 0.043 0.049 0.056 0.063 0.069 0.075 0.081 0.087 0.092 0.097 0.102 0.106 0.110 0.115 0.118 0.122 0.126 0.132 0.138 0.146 0.156 0.184 0.225 S12 43 61 68 72 74 74 74 74 73 73 72 71 70 70 69 69 69 69 69 69 70 71 73 74 76 78 81 81 |S11| 0.951 0.948 0.947 0.945 0.944 0.941 0.938 0.935 0.932 0.928 0.923 0.919 0.913 0.908 0.902 0.894 0.887 0.878 0.868 0.857 0.845 0.832 0.816 0.798 0.776 0.751 0.688 0.609 S22 -3 -4 -6 -8 -10 -12 -15 -16 -19 -21 -23 -25 -27 -29 -31 -33 -35 -37 -39 -42 -44 -46 -49 -52 -55 -58 -64 -70
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700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2800 3000
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Parameters
Freescale Semiconductor, Inc.
Table 8. Low IP3 Noise Parameters (VCC = 2.7 V, EN1 = High, EN2 = High)
f (MHz) 400 410 420 430 440 450 460
Fmin (dB) 0.57 0.57 0.58 0.58 0.59 0.59 0.59 0.6 0.6 0.6 0.61 0.63 0.64 0.66 0.67 0.69 0.7 0.72 0.73 0.76
Mag 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.26 0.25 0.25 0.25 0.25 0.24 0.24 0.24
Ang 15.5 15.7 16 16.2 16.5 16.7 16.9 17.2 17.4 17.7 17.9 19.1 20.3 21.5 22.7 23.9 25.1 26.4 27.6 30
Rn 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19
Ga (dB) 25.3 24.93 24.8 24.68 24.56 24.44 24.32 24.2 24.09 23.97 23.85 23.01 22.59 22.16 21.74 21.32 20.89 20.47 20.05 19.2
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470 480 490 500 550 600 650 700 750 800 850 900 1000
Table 9. High IP3 Noise Parameters (VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz) 400 410 420 430 440 450 460 Fmin (dB) 0.65 0.65 0.65 0.66 0.66 0.66 0.66 Mag 0.2 0.2 0.2 0.19 0.19 0.19 0.19 Ang 5.5 6.1 6.7 7.3 7.9 8.5 9.1 Rn 0.22 0.22 0.22 0.21 0.21 0.21 0.21 Ga (dB) 26.21 26.06 25.91 25.76 25.61 25.46 25.31
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Table 9. High IP3 Noise Parameters (Continued) (VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz) 470 480 490 500 550 600 650 Fmin (dB) 0.66 0.67 0.67 0.67 0.68 0.69 0.7 0.71 0.72 0.73 0.74 0.75 0.77 Mag 0.19 0.18 0.18 0.18 0.17 0.16 0.15 0.14 0.13 0.12 0.11 0.1 0.09 Ang 9.7 10.3 10.9 11.5 14.5 17.5 20.5 23.5 26.5 29.4 32.4 35.4 41.4 Rn 0.21 0.2 0.2 0.2 0.19 0.19 0.18 0.18 0.17 0.17 0.16 0.16 0.15 Ga (dB) 25.16 25.01 24.87 24.54 24.06 23.59 23.12 22.65 22.17 21.7 21.23 20.76 19.81
Freescale Semiconductor, Inc...
700 750 800 850 900 1000
3 Application Information
The MBC13720 SiGe:C LNA is designed for applications in the 400 MHz to 2.4 GHz range. It has four different modes; Low IP3, High IP3, Bypass, and Standby. The IC is programmable through the Enable 1 and 2 pins. In Low IP3 mode, the current consumption is optimized. Current consumption is higher in High IP3 mode to boost the intercept point performance. The gain difference between Low IP3 and High IP3 modes is typically 1.0 dB and typically the Low IP3 mode has a slightly better noise figure performance. The internal bypass switch is designed for broadband applications. One of the advantages of the MBC13720 is the simplification of matching network in both bypass and amplifier modes. The bypass switch is designed such that the changes of input and output return losses between bypass mode and amplifier mode is minimized. As a result, the mismatch at the LNA input and output is minimized and therefore, the matching network design is simplified as well. In the design of the external matching network, conjugate match condition does not necessarily provide the best noise figure performance. Balancing between noise figure, gain, and intercept point is the major design consideration. Typical circuits are provided in Figures 2 and 3 for 1.9 GHz, 2.4 GHz and 900 MHz applications. In Figure 2, it shows the typical application circuit at 1.9 and 2.4 GHz. The noise figure, input intercept point, gain, and return losses are optimized. L2 and C2 act as a low frequency trap to improve the input intercept point. The noise figure measured on this board is 1.4 dB (in Low IP3 mode) at 1.9 GHz, including the external components, connectors, and PC board. The input third order intercept point is 10 dBm (in High IP3 mode).
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Application Information
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In Figure 3, the typical application circuit at 900 MHz is shown. The input low frequency trap again is used to maximize the input intercept point. It has moderate IP3 performance and high gain. For higher IP3, Figure 4 shows the application circuit with feedback network. Capacitive feedback method is used to reduce the gain and therefore increase the 3rd order input intercept point. The feedback circuit is designed to provide unconditional stability. The corresponding PCBs are shown in Figures 5 through 10. Typical characteristics of the application boards are shown in Table 10.
C1 27 pF RF In
T1 L1 8.2 nH C2 4.7 F
4 5 6
3 2 1
T2 C3 1.0 pF R1 330
T3 L2 2.7 nH
C6 27 pF
RF Out
Bias Control
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C4 4.7 F EN1 T1, T2, T3 = 50 Microstrip Line @ 150 mils EN2
Figure 2. Typical 1.9 and 2.4 GHz LNA Application Schematic
C1 47 pF L1 8.2 nH RF In L2 47 nH C2 4.7 F 4 5 6 3 2 1
T1 R1 330
T2 L3 8.2 nH
C3 3.0 pF
RF Out
Bias Control
C4 47 pF EN1 EN2 C5 4.7 F
Figure 3. Typical 900 MHz LNA Application Schematic
10
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C3 0.5 pF C4 0.5 pF C5 1.0 pF
C1 150 pF RF In L1 22 nH C2 4.7 F
4 5 6
3 2 1
R2 10 R1 330
C6 3.0 pF RF Out L2 6.8 nH
Bias Control
EN1
EN2
C7 4.7 F
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Figure 4. High IP3 900 MHz LNA Application Schematic
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Application Information
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3.048 cm (1.2 in)
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2.374 cm (0.9348 in)
Figure 5. 1.9/2.4 GHz PCB
Figure 6. 1.9/2.4 GHz Assembly Diagram
Figure 7. 900 MHz PCB
Figure 8. 900 MHz Assembly Diagram
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Figure 9. 900 MHz Capactive FeedbackPCB
Figure 10. 900 MHz Capacitive Feedback Assembly Diagram
Table 10. Typical Electrical Characteristics of the Application Schematic
Mode 900 MHz TYPICAL (See Figure 3) Gain Noise Figure Input Intermodulation Intercept Point Output Intermodulation Intercept Point Output 1dB Compression Point Input Return Loss Output Return Loss Reverse Isolation 900 MHz HIGH IP3 (See Figure 4) Gain Noise Figure Input Intermodulation Intercept Point Output Intermodulation Intercept Point Output 1dB Compression Point G NF IIP3 OIP3 P1dB 16 1.4 10 26 11.5 15 1.3 3.5 18.5 12 -4.0 4.0 27 23 7.0 -14.5 dB dB dBm dBm dBm G NF IIP3 OIP3 P1dB |S11|2 |S22|2 |S12|2 21 1.3 2.0 23 11.5 11 11 25 20 1.2 -3.0 17 10.5 10 10 24 -2.9 2.9 29 26 5.0 12 15 2.9 -22 22 dB dB dBm dBm dBm dB dB dB Symbol High IP3 Low IP3 Bypass Standby Unit
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Application Information
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Table 10. Typical Electrical Characteristics of the Application Schematic (Continued)
Mode Input Return Loss Output Return Loss Reverse Isolation 1.9 GHz (See Figure 2) Gain Noise Figure G NF IIP3 OIP3 P1dB |S11|2 |S22|2 |S12|2 14 1.5 10 24.4 11.5 10 8.0 19 13 1.4 4.0 17 11 8.0 7.0 19 -2.5 2.5 29 26.5 5.0 20 30 2.5 -16 16 dB dB dBm dBm dBm dB dB dB Symbol |S11|2 |S22|2 |S12|2 High IP3 12 12 22 Low IP3 11 12 20 Bypass 8.0 14 4.0 Standby 14.5 Unit dB dB dB
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Input Intermodulation Intercept Point Output Intermodulation Intercept Point Output 1dB Compression Point Input Return Loss Output Return Loss Reverse Isolation 2.4 GHz (See Figure 2) Gain Noise Figure Input Intermodulation Intercept Point Output Intermodulation Intercept Point Output 1dB Compression Point Input Return Loss Output Return Loss Reverse Isolation
G NF IIP3 OIP3 P1dB |S11|2 |S22|2 |S12|2
12 1.7 13 25 14 12 8.0 17
11 1.65 6.0 17.5 14 10 7.0 17
-2.8 2.8 25 22 5.0 12 14 2.8
-15 15
dB dB dBm dBm dBm dB dB dB
14
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Packaging
4 Packaging
A G V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40
6
5
4
S
1 2 3
-B-
D
6 PL
0.2 (0.008)
M
B
M
N
DIM A B C D G H J K N S V
Freescale Semiconductor, Inc...
J C
H
K
Figure 11. Outline Dimensions for SOT-363 (Case Outline 419B-01, Issue G)
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HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu Minato-ku, Tokyo 106-8573 Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 TECHNICAL INFORMATION CENTER: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MBC13720/D
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